Strain analysis of InN nanodots by Micro-Raman scattering
碩士 === 國立交通大學 === 電子物理系所 === 96 === In this thesis,we studied the realationsheep between the strain and the different size InN nano-dots by ��-Raman and X-ray diffraction(XRD). The Obvious shift of Raman E2 mode is observed with different size InN nano-dots. As the aspect ratio decreased, we found t...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/6kkn58 |
| Summary: | 碩士 === 國立交通大學 === 電子物理系所 === 96 === In this thesis,we studied the realationsheep between the strain and the different size InN nano-dots by ��-Raman and X-ray diffraction(XRD).
The Obvious shift of Raman E2 mode is observed with different size InN nano-dots. As the aspect ratio decreased, we found the compressive strain increased. The strain variation versus aspect ratio could be fitted well by 2D thick ribbon model and it was used for elastic relaxation process of island growth.We could determine the initial strain around 0.42 % with the Raman scattering and X-ray diffraction after primary plastic relaxation and also obtained the slope coefficient between Raman E2 mode and residual strain.The thermal expansion coefficients of InN nano-dots and buffer layer are different from each other, so the residual thermal strain results from that high temperature cool down to room temperature.We found that residual thermal strain can be neglect because of the small by calculation.
|
|---|