Properties and Mechanisms of the Resistance Switching of CaCu3Ti4O12 (CCTO) Thin films

碩士 === 國立交通大學 === 電子工程系所 === 96 === Recently, many kinds of new nonvolatile memory manufactured from different materials have attracted great attention. The resistance random access memory (RRAM) which has bistable resistive switching character started to attract the research community’s interest ag...

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Bibliographic Details
Main Authors: Yu-Shu Shen, 沈佑書
Other Authors: Bi-Shiou Chiou
Format: Others
Language:zh-TW
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/54359621108091815928