| Summary: | 碩士 === 國立交通大學 === 電子工程系所 === 96 === The resistive random access memory (RRAM) has potential to be next-generation nonvolatile memory (NVM) because of its ascendant advantages such as simple device structure, low operation voltage, low power consumption, long retention time, small cell size, high operation speed, low cost, good endurance, and non-destructive readout.
In this thesis, the RRAM devices manufactured based on SrZrO3 (SZO) thin films are studied and developed. At first, I will introduce the applications, fundamental characteristics, and advantages of next-generation nonvolatile memories. The conduction mechanisms of RRAM that have been published are also discussed. In experimental details, pure-SZO and V2O5 doped SZO film was deposited on the LaNiO3 buffer layer by RF magnetron sputter. Pt and Al act as bottom electrode and top electrode, respectively. Therefore, electrode/resistive thin film/buffer layer/electrode structure is formed. First, we will discuss the influence of V-doping effect. Second, we use thermal treatment to improve and stabilize the switching property by rapid thermal annealing on SZO film. The effects of resistive switching property by different rapid thermal treatment condition are also compared and discussed. The possible resistive switching mechanism based on the research results is also discussed in chapter 3.
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