Effects of Vanadium Doping and Rapid Thermal Annealing on Sputter-Deposited SrZrO3 Resistive Switching Memory Device
碩士 === 國立交通大學 === 電子工程系所 === 96 === The resistive random access memory (RRAM) has potential to be next-generation nonvolatile memory (NVM) because of its ascendant advantages such as simple device structure, low operation voltage, low power consumption, long retention time, small cell size, high ope...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/90649700638892060343 |