Subband Structures of Silicon and Germanium Channels in P-type Metal-oxide-semiconductor Devices
碩士 === 國立交通大學 === 電子工程系所 === 96 === For today’s technology, uniaxial–process induced stress is used to improve device performance. One method is the adoption of the embedded and raised SiGe in the p-channel source and drain and a tensile capping layer on the n-channel device. The other method is wit...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04007916635213769915 |