The Research of High-Temperature Stable HfLaON p-MOSFETs
碩士 === 國立交通大學 === 電子工程系所 === 96 === We research a novel 1000℃ stable HfLaON p-MOSFET with Ir3Si gate. Low leakage current of 1.8 × 10−5 A/cm2 at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm2/V．s are simultaneously obtained at 1.6 nm equivalent oxid...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/22553741401031927766 |