Study on the analysis and optimization design of Trench LDMOSFET

碩士 === 國立交通大學 === 電機學院IC設計產業專班 === 96 === Power devices are widely applied to power electronics owing to great semiconductor industry. Power MOSFET is one kind of power devices, which has lateral and vertical structures. In order to integrate power MOSFET with planar IC process, this device must be...

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Bibliographic Details
Main Authors: Hung-Chun Lin, 林宏春
Other Authors: Jen-Chung Lou
Format: Others
Language:en_US
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/44648827797612742785