| Summary: | 碩士 === 國立交通大學 === 工學院碩士在職專班精密與自動化工程組 === 96 === Previously pulsed-pressure chemical vapor deposition (PPCVD) process has been demonstrated it could yield highly uniform thin film deposition as compared to conventional thermal chemical vapor deposition process. In addition, very high material conversion efficiency up to 95% was found experimentally. To scale up the process as a practical tool in thin film deposition, detailed understanding of transport phenomena of PPCVD process is stronly required. In this thesis, a parallelized Navier-Stokes equation solver is used to simulate the detailed transient flow structures in a typical PPCVD process during the pump-up process up to 0.1 seconds. Test conditions include fixed upstream stagnation pressure (100,000 Pa) and temperature (300K) and various initial background pressures in the range of 100 through 1,000 Pa. In addition, substrate temperature ranges from 300K to 800K. Very complicated transient flow fields are found inside the PPCVD chamber and discussed wherever are possible. Comments on the validity of using Navier-Stokes equation solver for PPCVD are also presented at the end of the thesis.
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