Study on Characterization and Compensation Circuits of Low-Temperature Polycrystalline Silicon Thin-film Transistor for Active Matrix Displays
博士 === 國立交通大學 === 光電工程系所 === 96 === A novel technology to eliminate the photo leakage current of poly-silicon thin film transistor (poly-Si TFT) with top gate is developed. A thin metal film is formed on the glass substrate to be used as light-shielding layer. The light-shielding layer, buffer layer...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/34877191781162043209 |