The Study of The GaN-Based Nano-Structure by Inductively Coupled Plasma
碩士 === 國立成功大學 === 光電科學與工程研究所 === 96 === Recently, III-nitride wide bandgap materials have aroused considerable interests due to various applications, such as traffic signals, back-side lighting in liquid crystal display, illumination lighting by white light emitting diodes (LEDs), and so on. Howe...
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Format: | Others |
Language: | en_US |
Online Access: | http://ndltd.ncl.edu.tw/handle/88156778188511899536 |