The Study of The GaN-Based Nano-Structure by Inductively Coupled Plasma

碩士 === 國立成功大學 === 光電科學與工程研究所 === 96 === Recently, III-nitride wide bandgap materials have aroused considerable interests due to various applications, such as traffic signals, back-side lighting in liquid crystal display, illumination lighting by white light emitting diodes (LEDs), and so on. Howe...

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Bibliographic Details
Main Authors: Yu-Hsien Shan, 沈育賢
Other Authors: Yan-Kuin Su
Format: Others
Language:en_US
Online Access:http://ndltd.ncl.edu.tw/handle/88156778188511899536