Increase of Light Extraction Efficiency of GaN-based Light Emitting Diodes by Nanosphere Lithography
碩士 === 國立成功大學 === 光電科學與工程研究所 === 96 === In conventional GaN light-emitting diodes (LEDs), the external quantum efficiency is low because only small fraction of photons which generate inside of GaN-based LEDs can escape. Due to the big difference of refractive indices between GaN (n=2.5) and air (n=1...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/07054137868744108863 |