The Studies of GaN MOS Capacitors using HfO2 as Gate Dielectrics
碩士 === 國立成功大學 === 電機工程學系碩博士班 === 96 === This thesis aims at evaluating the possibility to fabricate the GaN-based MOSFET. The sputtered HfO2 was used as an insulating layer and aluminum was used as the gate metal to build the MOS diode, of which the properties were studied. Besides, the surface clea...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05901313532904791162 |