Influence of hydrogen peroxide solution on properties of ZnO films and metal-semiconductor contact

• Main Authors: Wei-Chin Wang, 王偉欽
• Other Authors: Mau-Phon Houng
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/yqxen3

碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 96 === Besides having a wide direct bandgap of 3.37 eV, ZnO has an exciton binding energy of about 60 meV which is much higher than that of 22 meV and 25 meV for ZnSe and GaN, respectively. These benefits confirm the opto-electronic devices fabricated by ZnO material should have highly efficient performance at room temperature. Therefore the ZnO-based devices such as lighting-emitting diodes (LEDs), laser diodes (LDs), UV photodetectors, and solar cells have been recently proposed. In considering the ZnO-based LEDs, the fabrications of homo-structures still face much challenge. Owing to the non-stoichiometric property of making an undoped ZnO to be a n-type material, it is very difficult to obtain a highly doped p-type ZnO for the p-n junction. So we use MIS structure instead of p-n junction structure. Recently, nitrogen ion (N+) implantation and hydrogen peroxide (H2O2) solution were utilized to fabricate the ZnO-based MIS structures, On evaluating the production cost and simplifying the fabrication processes, the treatment by H2O2 solution is a better choice than the ion-implantation in obtaining an insulating ZnO layer. We immerse our sample in hydrogen peroxide to be an insulator layer. After that, Pt Schottky contact was deposited on peroxide-treated ZnO samples by thermal evaporation. Ti/Al contacts were used as an ohmic contact. We can get its I-V curve by HP4156.