Influence of hydrogen peroxide solution on properties of ZnO films and metal-semiconductor contact
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 96 === Besides having a wide direct bandgap of 3.37 eV, ZnO has an exciton binding energy of about 60 meV which is much higher than that of 22 meV and 25 meV for ZnSe and GaN, respectively. These benefits confirm the opto-electronic devices fabricated by ZnO materi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/yqxen3 |