| Summary: | 碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 96 === The theory is focused on the fabrication of grating structure on SOI(100) wafers using the method of AFM lithography. The grating patterning was a periodic structure of oxidation lines written on silicon surface using a voltage biased AFM nanoprobe. With the lines of silicon oxide serving as resistant, the gratings were wet-etched and formed using the silicon solvent TMAH. Operation parameters of the AFM nanoprobe as the scanning speed, biased voltage, voltage form (AC/DC) and frequency were evaluated. Anisotropic wet-etching parameters as etching time, temperature and stirring were also studied. In experiment, a grating of the grating period of 1μm, grating line width of 500nm and grating depth of 500nm was achieved by 3-min wet etching in TMAH at 70℃ using a 1 kHz AC voltage source.
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