The study of Nitride-based Schottky diode and MSM photodetector with MgN/GaN nucleation layer and patterned sapphire substrate
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 96 === In this thesis, the nitride-based III-V alloys with a 12-pair MgxNy/GaN double buffer layer or pattern sapphire substrate had been grown and characterized by metal organic chemical vapor deposition system (MOCVD). Several analysis techniques, such as Hall me...
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/93266901872486956747 |