A Study of Material Characteristics of Metal-Induced Poly-Silicon Crystallization
碩士 === 國立成功大學 === 航空太空工程學系碩博士班 === 96 === The objectives of this study are to induce poly-silicon crystallization on an amorphous-silicon thin film by using metal-induced method, and to investigate the effect of silicon-nitride thin film on the uniformity of crystallization. In the experiment, gold...
Main Authors: | Jing-Min Chen, 陳璟旻 |
---|---|
Other Authors: | Siu-Tong Choi |
Format: | Others |
Language: | zh-TW |
Published: |
2008
|
Online Access: | http://ndltd.ncl.edu.tw/handle/79206520663432534332 |
Similar Items
-
Characterizations of Metal Induced Lateral Crystallization Poly-Silicon
by: J.Y.Chang, et al.
Published: (2003) -
A Novel Metal Induced Crystallization of Amorphous Silicon on Glass Substrate Technology for Low Temperature Poly-Silicon Solar Cell Applications
by: Yong-JieZhong, et al.
Published: (2010) -
The study of Characteristics of Low-Temperature Polycrystalline Silicon thin film Prepared by Metal Induced Crystallization
by: Shih-Chieh Lin, et al.
Published: (2003) -
Metal Induced Lateral Crystallization of Amorphous Silicon with a Silicon Nitride Layer
by: Chien-Hua Tseng, et al.
Published: (2006) -
Aluminum Induced Crystallization of Hydrogenated Amorphous Silicon Films at Low Temperature
by: Lee, Min-Chang, et al.
Published: (1998)