| Summary: | 碩士 === 國立成功大學 === 航空太空工程學系碩博士班 === 96 === The objectives of this study are to induce poly-silicon crystallization on an amorphous-silicon thin film by using metal-induced method, and to investigate the effect of silicon-nitride thin film on the uniformity of crystallization. In the experiment, gold was used to induce poly-silicon crystallization. Two groups of chips, with and without a SiNX thin film, were fabricated. Poly-silicon crystallization on the a-Si thin film was induced in a furnace. After both gold and silicon-nitride thin films were removed by wet etching, experimental instruments, such as XRD, EDS, SEM and Raman Spectrometer, were used in order to investigate material characteristics of the induced poly-silicon. Experimental results indicate that poly-silicon crystallization had successfully been induced on the amorphous-silicon thin film and was more uniformly distributed for chips with a SiNX thin film than those without a SiNX thin film. Parameters of fabrication process in the present experiment can be used to control the growth of poly-silicon crystallization.
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