The fabrication and electrical property of metal-BiFeO3-insulator-silicon (MFIS) structures for non-volatile memory applications
碩士 === 明志科技大學 === 化工與材料工程研究所 === 97 === Abstract In this study, metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with BiFeO3 (BFO) ferroelectric layer and hafnium oxide (HfO2) zirconium oxide (ZrO2) and yttrium oxide (Y2O3) and insulator layer have been successfully fabricated. The...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/94364164307750555236 |