Calculation of Band Structures of β-FeSi2 by Using Tight-Binding Method

• Main Authors: Tzu-wen Song, 宋子文
• Other Authors: Jung-sheng Huang
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/82375513662170973332

碩士 === 義守大學 === 電子工程學系碩士班 === 96 === β-FeSi2 is a Si-based semiconductor with a direct band gap of ∼0.83-0.87eV at room temperature. This feature makes the β-FeSi2 a potential candidate for the use in the light emitters. In this paper, the band structures of β-FeSi2 is calculated by tight-binding method(TBM). The results show that the direct and indirect band gaps of β-FeSi2 differ only 0.022eV. The other different band-structure calculating methods also show that the β-FeSi2 has the direct and indirect band gaps characteristics. Thus, the TBM can still be used to calculate the band structures of a complicated crystal such as β-FeSi2. And the physical characteristics of the band structures of β-FeSi2 are analyzed easierly by using TBM than the other methods.