Calculation of Band Structures of β-FeSi2 by Using Tight-Binding Method
碩士 === 義守大學 === 電子工程學系碩士班 === 96 === β-FeSi2 is a Si-based semiconductor with a direct band gap of ∼0.83-0.87eV at room temperature. This feature makes the β-FeSi2 a potential candidate for the use in the light emitters. In this paper, the band structures of β-FeSi2 is calculated by tight-binding me...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/82375513662170973332 |