Fabrication and Characterization of AlGaN/GaN HEMTs
碩士 === 大葉大學 === 電機工程學系 === 96 === Wide bandgap compound material, galliun nitride (GaN), has a huge advantage of power handling comparing to the convention smiconductor. In particular, the wide bandgap of GaN has higher breakdown field than GaAs or silicon (Si). On the other hand, GaN based HEMTs ca...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60224551910826478519 |