Investigation of AlGaN MOS Diode Prepared by Liquid-Phase Deposition Oxide
碩士 === 大葉大學 === 電機工程學系 === 96 === In this experiment, we have deposited high quality silicon dioxide (SiO2) layer onto AlGaN as gate oxide by using liquid-phase deposition (LPD) with supersaturated H2SiF6 and H3BO3 solution at room temperature. Before depositing silicon dioxide (SiO2), the AlGaN wer...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/83265776729719370749 |