The Study of Silicon Germanium Material on Photodetectors
博士 === 大葉大學 === 電機工程學系 === 96 === The requirements of Silicon-based photonic devices in the next generation of chip technologies have caused extensive studied on SiGe devices due to the strained SiGe material exhibits several advantages, such as high electron and hole mobility than those in bulk Si,...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/64600490948833740635 |