Growth and characteristics of As-doped p-type ZnO films by plasma-assisted molecular beam epitaxy
碩士 === 中原大學 === 應用物理研究所 === 96 === Abstract As-doped p-type ZnO films were grown on Al2O3 using plasma assisted molecular beam epitaxy at growth temperature of 450 ℃. The concentration of As was varied through varying the temperature of As cell. Hall measurement was employed to determine the resisti...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/28938261073134574803 |