Experiments and Modeling of Phosphorus Segregation at the Si/SiO2 Interface
博士 === 長庚大學 === 電子工程學研究所 === 96 === The influence of interface segregation on dopant distribution near the silicon surface is very important for shallow junction and silicon-on-insulator (SOI) devices. This dissertation focuses on the phosphorus dose loss induced by the interface segregation. Mode...
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| Format: | Others |
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2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/86058612556663469321 |