Physical and Electrical Properties of High-κ Praseodymium Titanium Oxide Dielectric for Low Temperature TFTs Application
碩士 === 長庚大學 === 電子工程學研究所 === 96 === In this work, after the poly-Si thin film transistors channel are deposited, we utilize high κ value material praseodymium titanium oxide to form the gate dielectric of the low temperature poly-Si thin film transistors by dual e-gun evaporation system, and use T...
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| Format: | Others |
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2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71406936615930283477 |