Study of electrical and physical properties of high-k ytterbium oxide gate dielectrics
碩士 === 長庚大學 === 電子工程學研究所 === 96 === In this thesis, we selected three kinds of gas flow ratio first, deposited high-k ytterbium oxides (Yb2O3) as the metal-oxide-semiconductor capacitance gate dielectrics by reactive RF sputtering. Then performed post deposition O2 rapid thermal annealing treatment...
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| Format: | Others |
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2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/86948075492298994890 |