Study of Physical and Electrical Properties of High-k Y2O3 , Y2TiO5, and Yb2O3 dielectrics SONOS-type memory
碩士 === 長庚大學 === 電子工程學研究所 === 96 === In the traditional floating gate memory structure, when the tunneling oxide scaled down below 10nm, the stored charge in the poly-silicon floating gate may easily leak through the defects in the tunneling oxide. In order to solve the problem of this gate structure...
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| Format: | Others |
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2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/69730968309656639034 |