| Summary: | 碩士 === 長庚大學 === 電子工程學研究所 === 96 === High electron mobility transistors (HEMTs) based on GaAs and AlGaN/GaN heterostructure have great promise in high-power and high-frequency applications. Reliable ohmic and Schottky contacts are required for GaAs and AlGaN/GaN HEMTs to become avialable technology.The absence of reliable gate insulation layer is a death wound for GaAs MOSFET.Epitaxical rare earth oxide growth of Pr2O3 and Gd2O3 on Depletion Mode GaAs pHEMT for MOSFET. Finally, we analyzed the characteristics of its transistor current and DC for various temperature at 100 K to 400 K.
Passivations of the modulation-doped AlGaN/GaN Schottky surfaces, by means of (NH4)2Sx+UV and P2S5/(NH4)2Sx+UV treatments, have been carefully studied.By sulfurizaton treatment and inserting a high-k oxidation layer to AlGaN/GaN for MOSFET after the analysis curing transistor current, high power and by the way of the pulsed IV comparison to how much the surface defect and these gauging analysis curing to part influence.
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