The investigation of High-k insulator Heterojunction HEMTs with Various Sulfur Passivation Technology
碩士 === 長庚大學 === 電子工程學研究所 === 96 === High electron mobility transistors (HEMTs) based on GaAs and AlGaN/GaN heterostructure have great promise in high-power and high-frequency applications. Reliable ohmic and Schottky contacts are required for GaAs and AlGaN/GaN HEMTs to become avialable technology.T...
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| Format: | Others |
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2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93942892886870243465 |