To Investigate the Data Retention and Endurance for the Optimized Gadolinium (Gd) Nanocrystal Flash Memory
碩士 === 長庚大學 === 電子工程學研究所 === 96 === Recently, floating gate memory devices widely be used in non-volatile data storage application. However, there are some major issues including devices scaling limitation, higher operation voltage and poor data retention time needed to overcome for conventional flo...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Published: |
2008
|
Online Access: | http://ndltd.ncl.edu.tw/handle/85754766683502368230 |