To Investigate the Data Retention and Endurance for the Optimized Gadolinium (Gd) Nanocrystal Flash Memory

碩士 === 長庚大學 === 電子工程學研究所 === 96 === Recently, floating gate memory devices widely be used in non-volatile data storage application. However, there are some major issues including devices scaling limitation, higher operation voltage and poor data retention time needed to overcome for conventional flo...

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Bibliographic Details
Main Authors: Yu Kai Chen, 陳育楷
Other Authors: C. S. Lai
Format: Others
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/85754766683502368230