Nitride-Based MQW LEDs With high temperature SiN Buffer Layer
碩士 === 長庚大學 === 光電工程研究所 === 96 === GaN epitaxial layers and nitride-based multiquantum well light emitting diode (LED) structure with high temperature SiN buffer layer were grown on thick GaN/sapphire template by metalorganic chemical vapor deposition (MOCVD). It was found that we could reduce defec...
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| Format: | Others |
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2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04491292119477765688 |