Study of influence of growth temperature to InGaN/GaN multiple quantum wells
碩士 === 長庚大學 === 光電工程研究所 === 96 === Abstract Different InGaN/GaN multiple quantum wells structures were grown by metal organic chemical vapor deposition (MOCVD).The sample were investigated by high resolution X-ray diffraction (HCXRD)、photoluminescence (PL)、electroluminescence (EL) and luminescence-c...
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| Format: | Others |
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2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/03744696333901184440 |
| Summary: | 碩士 === 長庚大學 === 光電工程研究所 === 96 === Abstract
Different InGaN/GaN multiple quantum wells structures were grown by metal organic chemical vapor deposition (MOCVD).The sample were investigated by high resolution X-ray diffraction (HCXRD)、photoluminescence (PL)、electroluminescence (EL) and luminescence-current to characterize their optical property and crystal quality by changed growth temperature of multiple quantum well structures. Sample with higher growth temperature shows better interface quality (FWHM reduced to 0.25°from 0.35°)、better luminescence intensity (increase 17% and 31% at 100K and 300K,respectively) and also have higher saturated current density.
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