Study of influence of growth temperature to InGaN/GaN multiple quantum wells
碩士 === 長庚大學 === 光電工程研究所 === 96 === Abstract Different InGaN/GaN multiple quantum wells structures were grown by metal organic chemical vapor deposition (MOCVD).The sample were investigated by high resolution X-ray diffraction (HCXRD)、photoluminescence (PL)、electroluminescence (EL) and luminescence-c...
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| Format: | Others |
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2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/03744696333901184440 |