Research on the Post-treatment of Reactive Sputtering Graphite for Field Emission Device

碩士 === 大同大學 === 光電工程研究所 === 95 === This thesis is divided into two parts. In the first part, we deposite the flake-like graphite with the mixture of methane, hydrogen and argon in the R.F. magnetron sputtering system. By means of changing the experiment parameters as temperature, gas ratio, power de...

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Main Authors: Chin-Tze Huang, 黃欽澤
Other Authors: Wen-Ching Shih
Format: Others
Language:zh-TW
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/93r446
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spelling ndltd-TW-095TTU051240182019-05-15T20:22:10Z http://ndltd.ncl.edu.tw/handle/93r446 Research on the Post-treatment of Reactive Sputtering Graphite for Field Emission Device 反應式濺鍍石墨的後處理於場發射元件之研究 Chin-Tze Huang 黃欽澤 碩士 大同大學 光電工程研究所 95 This thesis is divided into two parts. In the first part, we deposite the flake-like graphite with the mixture of methane, hydrogen and argon in the R.F. magnetron sputtering system. By means of changing the experiment parameters as temperature, gas ratio, power density, working pressure and DC-bias, we can find out lower turn-on field and larger electric current density. In the second part, we deal with the surface of flake-like graphite by hydrogen and oxygen plasma and make the heat treatment of hydrogen in quartz tube furnace. We hope that the post-treatment of the above can improve the field emission properties. With the different post-treatment, the surface morphology and quality will be different. In the experiment, we find that the better post-treatment which can reduce the turn-on field and raise the electric current density is the heat treatment of hydrogen in quartz tube furnace. The turn-on field is at 5.5 V/μm and electric current density reach 1m A/cm2 under 12 V/μm. In the part of hydrogen plasma post-treatment, the turn-on field is at 6 V/μm and electric current density reach 0.6 mA/cm2 under 12 V/μm. Wen-Ching Shih 施文欽 2007 學位論文 ; thesis 66 zh-TW
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language zh-TW
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description 碩士 === 大同大學 === 光電工程研究所 === 95 === This thesis is divided into two parts. In the first part, we deposite the flake-like graphite with the mixture of methane, hydrogen and argon in the R.F. magnetron sputtering system. By means of changing the experiment parameters as temperature, gas ratio, power density, working pressure and DC-bias, we can find out lower turn-on field and larger electric current density. In the second part, we deal with the surface of flake-like graphite by hydrogen and oxygen plasma and make the heat treatment of hydrogen in quartz tube furnace. We hope that the post-treatment of the above can improve the field emission properties. With the different post-treatment, the surface morphology and quality will be different. In the experiment, we find that the better post-treatment which can reduce the turn-on field and raise the electric current density is the heat treatment of hydrogen in quartz tube furnace. The turn-on field is at 5.5 V/μm and electric current density reach 1m A/cm2 under 12 V/μm. In the part of hydrogen plasma post-treatment, the turn-on field is at 6 V/μm and electric current density reach 0.6 mA/cm2 under 12 V/μm.
author2 Wen-Ching Shih
author_facet Wen-Ching Shih
Chin-Tze Huang
黃欽澤
author Chin-Tze Huang
黃欽澤
spellingShingle Chin-Tze Huang
黃欽澤
Research on the Post-treatment of Reactive Sputtering Graphite for Field Emission Device
author_sort Chin-Tze Huang
title Research on the Post-treatment of Reactive Sputtering Graphite for Field Emission Device
title_short Research on the Post-treatment of Reactive Sputtering Graphite for Field Emission Device
title_full Research on the Post-treatment of Reactive Sputtering Graphite for Field Emission Device
title_fullStr Research on the Post-treatment of Reactive Sputtering Graphite for Field Emission Device
title_full_unstemmed Research on the Post-treatment of Reactive Sputtering Graphite for Field Emission Device
title_sort research on the post-treatment of reactive sputtering graphite for field emission device
publishDate 2007
url http://ndltd.ncl.edu.tw/handle/93r446
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