Influence of Surface Integrity of Silicon Substrate on the Growth Mechanisms of Carbon Nanotube

• Main Authors: Chia-Wei Hsu, 許家偉
• Other Authors: Choung-Lii Chao
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/17106661265953046874

碩士 === 淡江大學 === 機械與機電工程學系碩士班 === 95 === Chemical vapor deposition（CVD）was adopted in this research to synthesize multi-wall carbon nanotubes (MWCNT) where acetylene was used as carbon source and ferrocene-xylene worked as catalyst. Various surface pre-treatments were made on the silicon substrate to investigate the effect of the surface integrity on the growth of MWCNT. The morphology and characteristics of obtained carbon nanotubes were analyzed using field-emission scanning electron microscope（FESEM）and micro-Raman spectrometer. Results showed that atmospheric pressure air plasma（APAP）surface pre-treatment could increase the deposition rate of carbon and extend the growing temperature to up around 900℃. The amorphous layer induced by indentation or grinding processes, especially those having iron diffused into the amorphous layer, proved to have profound effect on the growth rate and growing temperature of carbon nanotube.