The Investigation on Subthreshold Behavior Model for Asymmetrical Double-gate MOSFETs
碩士 === 南台科技大學 === 電子工程系 === 95 === In recent years, studies about Double-Gate (DG) transistor have successively been proposed, and have attracted a lot of attention. As CMOS is scaled to the limit, dou-ble-gate (DG) MOSFET becomes increasingly important. A number of authors have ap-plied various sim...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/91003057503160193581 |