Investigation of the GaAs MOSFETs gate oxide by using photoelectrochemical oxidation method
碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 95 === In this study, we investigated the performance of the n-GaAs MOSFET that the gate oxide was directly grown on the semiconductor surface using photoelectrochemical (PEC) oxidation method. To investigate different PEC oxidation conditions for n-GaAs by PEC met...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/393ryp |