The study of Co-W-P thin film as diffusion barrier layer by electroless plating process
碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 95 === In this work, The Co-W-P films with 100nm thickness as diffusion barrier were deposited on Si substrate in an electroless plating bath at pH value of 8.5, 9.0 and 9.2, respectively. Before electroless plating, the Si substrate was successively eleansed, sens...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/khkv84 |