Development of silicon film epitaxy at low temperature by sputtering

• Main Authors: Hsiang-en Huang, 黃祥恩
• Other Authors: Wen-chang Yeh
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/21762884298225482431

碩士 === 國立臺灣科技大學 === 電子工程系 === 95 === We have demonstrated successful epitaxial growth of silicon film by sputtering technique. The optimun conditions are sputtering pressure is 5 mTorr, substrate temperature is 250℃, before epitaxy by sputtering the base vacuum just need 1.0×10-6 Torr. In addition, in the part that measure the quality of epitaxial sulicon film, we uses Raman and RHEED system, due to the measured depth of this two system is different, then we can use Raman system to measure the quality of epitaxial silicon film which the bulk and interface, and also can use RHEED system to oberve the change which near the surface of epitaxial silicon film, Finally we use TEM to observe the permutation of atom in the epitaxial silicon, and have make sure that it can epitaxy successfully. In the end, we directly grow a epitaxial layer which is N+ on the P-type substrate by sputtering, for fabricating PN-diode at the conditions of the most process temperature is below 250℃, the best ideality factor of the PN-diode is 1.67.