Development of silicon film epitaxy at low temperature by sputtering
碩士 === 國立臺灣科技大學 === 電子工程系 === 95 === We have demonstrated successful epitaxial growth of silicon film by sputtering technique. The optimun conditions are sputtering pressure is 5 mTorr, substrate temperature is 250℃, before epitaxy by sputtering the base vacuum just need 1.0×10-6 Torr. In addition,...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/21762884298225482431 |