Development of Ultra-Low-Temperature Polycrystalline Silicon Thin Film Deposition technology
碩士 === 國立臺灣科技大學 === 電子工程系 === 95 === In order to realize the purpose of plastic substrate thin film transistor , We have successfully deposited semitransparent film that the main composition of the film is silicon nitride by using reactive sputtered method. And, it has light absorption (absorption c...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/91500151403653087461 |
| Summary: | 碩士 === 國立臺灣科技大學 === 電子工程系 === 95 === In order to realize the purpose of plastic substrate thin film transistor , We have successfully deposited semitransparent film that the main composition of the film is silicon nitride by using reactive sputtered method. And, it has light absorption (absorption coefficient from 0 to 56000 cm-1) that can be applied as heat retaining layer to get Low Temperature poly-Si on plastic substrates after excimer laser annealing. By adjusting the flow rate of Ar and N2, we can control the absorption coefficient of the semitransparent film at will.After get the optimum condition of the semitransparent and using this film as heat retaining layer for the 90nm thick silicon, we use excimer laser and have successfully obtained poly-Si on plastic substrates. It’s grain size can reache to 5um.
|
|---|