The study of the film structure of Au(Be)/ GaAsP(100) wafer

• Main Authors: Wu-lin Hsieh, 謝武霖
• Other Authors: Wei-chun Cheng
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/47330460710424627940

碩士 === 國立臺灣科技大學 === 材料科技研究所 === 95 === The experiment we have performed is to study the metal layers of Au/AuBe/Au onto GaAsP(100) wafers. The metal films were deposited by a thermal-evaporation method. After the deposition process, the GaAsP wafers were annealed in a traditional tube furnace for Ohmic contact. This procedure is named as an alloying process. From XRD and TEM analyses, Au and Au3Be phases were found in the specimen before annealing process. Au and Au3Be phases in the metal layer were transformed into a mixture of Au and BePx compound after alloying processes above 450℃.Through TEM analysis, BePx compound has a lattice of face-centered cubic. The lattice contact of BePx is 5.084 ��. Furthermore, there is a cubic to cubic orientation relationship between BePx compound and GaAsP substrate. From TEM analyses, BePx compound was found in the metal layer after 450℃alloying. Another AuBe[h] phase was found in the metal layer after the alloying process at 600℃. After the alloying temperature up to 450℃, BePx compound were found in all the samples; however, BeAsx compound was only found in a sample heated at 550℃.