Photoluminescence study of InAsPSb bulk epilayers on InAs substrates
碩士 === 臺灣大學 === 電機工程學研究所 === 95 === We have successfully grown InAsPSb samples on n+ (100) InAs substrates by gas-source molecular beam epitaxy. Samples with rich arsenic composition which are located away from miscibility gap in quaternary composition plane show better surface morphology and crysta...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/98240893008666503102 |