Characterization and Temperature Detection Application of Si-based Metal-Oxide-Semiconductor (MOS) Capacitors with Thin Dielectrics
博士 === 國立臺灣大學 === 電機工程學研究所 === 95 === For MOS (n) capacitors, the saturation current is mainly attributed to the electron-hole pair recombination mechanism. But for MOS (p) capacitors, the saturation current is mainly attributed to the electron-hole pair generation mechanism, and is also controlled...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79297505702991918133 |