Study on InAsPSb/InAsSb multiple quantum well light emitting diode
碩士 === 臺灣大學 === 電子工程學研究所 === 95 === In this study, InAsPSb/InAsSb multiple quantum well light emitting diodes grown by gas source molecular beam epitaxy were fabricated and their EL properties were investigated. Before processing device sample, InAsPSb etching solution and etching rate were tested....
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/55730130009916186821 |