Germanium Metal-Oxide-Semiconductor Light-Emitting Device
碩士 === 國立臺灣大學 === 電子工程學研究所 === 95 === In this thesis, we present the infrared emission from Ge metal-oxide-semiconductor (MOS) tunneling diodes. The peak emission wavelength of ~1.8μm is observed. The electron-hole-plasma model is then used to get the fitting line of the emission spectra and the the...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/43338500907886277642 |