Fabrication and Characterization of AlGaN/GaN High Electron Mobility Field Effect Transistor
碩士 === 臺灣大學 === 光電工程學研究所 === 95 === Abstract We investigate methods of improving the electric properties of AlGaN/GaN field effect transistor (FET). An ohmic contact resistance of 0.47
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/88935188858030454642 |